- Fabricant :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
- Filtre sélectionné :
3 Produits
Photo. | Type | Prix | Quantité | Stocks | Fabricant | Description | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,971
On a de la marchandise.
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Fairchild Semiconductor | IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT | SMD/SMT | D2PAK-3 | + 175 C | Reel | 300 mW | Single | 480 V | 1.25 V | 51 A | 10 V | ||||
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91
On a de la marchandise.
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Infineon Technologies | IGBT Transistors 900V Warp 20-100kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 900 V | 2.25 V | 51 A | 100 nA | +/- 20 V | |||
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193
On a de la marchandise.
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Infineon Technologies | IGBT Transistors 900V Warp 20-100kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 900 V | 2.25 V | 51 A | 100 nA | +/- 20 V |
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